GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate
Author:
Affiliation:
1. Technische Universität Berlin, Berlin, Germany
2. Ferdinand-Braun-Institut, Berlin, Germany
3. Technical University of Berlin, Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9803836/09769948.pdf?arnumber=9769948
Reference42 articles.
1. Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module
2. FLIR E-series - E60 datasheet,0
3. KEMET,2021
4. Murata Power Solutions Ltd.,2021
5. Texas Instruments Inc.,2020
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices;Micromachines;2024-07-31
2. Multi-field coupling in designing embedded microchannels for three-dimensional integrated chip: A topology optimization approach;Applied Thermal Engineering;2024-07
3. Warpage deformation analysis of AMB ceramic substrates in power modules;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07
4. A hBN/B-Si-Al-O-glass composite coating growth on SiCp/Al composite using one-step PEO with nanoparticle addition for outstanding electrical insulation performance;Surface and Coatings Technology;2023-12
5. Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current;IEICE Electronics Express;2023-10-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3