A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems

Author:

Wong K.-Y. Roy,Kwan M.-H.,Yao F.-W.,Tsai M.-W.,Lin Y.-S.,Chang Y.-C.,Chen P.-C.,Su R.-Y.,Yu J.-L.,Yang F.-J.,Lansbergen G. P.,Hsiung C.-W.,Lai Y.-A.,Chiu K.-L.,Chen C.F.,Lin M.-C.,Wu H.-Y.,Chiang C.-H.,Liu S.-D.,Chiu H.-C.,Liu P.-C.,Chen C.-M.,Yu C.-Y.,Tsai C.-S.,Wu C.-B.,Lin B.,Chang M.-H.,You J.-S.,Wang S.-P.,Chen L.-C.,Liao Y.-Y.,Tsai L.Y.,Tsai Tom,Tuan H.C.,Kalnitsky Alex

Publisher

IEEE

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension;IEEE Transactions on Electron Devices;2024-03

3. Monolithically Integrated Logic Circuits Based on p-NiO Gated E-Mode GaN HEMTs;IEEE Electron Device Letters;2024-02

4. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01

5. The investigation of threshold voltage instability of p-GaN AlGaN/GaN HEMT caused by the measurement;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

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