Challenges in Circuit Designs of Nonvolatile-memory based computing-in-memory for AI Edge Devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9017212/9027628/09027656.pdf?arnumber=9027656
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Transverse dielectric and lateral channel band engineering of drain-side and source-side injection in Ge-based charge-trapping memory cells for energy-efficient applications;Journal of Computational Electronics;2023-02-01
2. Reliable Computing of ReRAM Based Compute-in-Memory Circuits for AI Edge Devices;Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided Design;2022-10-30
3. An 8-Bit in Resistive Memory Computing Core With Regulated Passive Neuron and Bitline Weight Mapping;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2022-04
4. Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure;Journal of Applied Physics;2021-10-14
5. ACIMS: Analog CIM Simulator for DNN Resilience;Electronics;2021-03-15
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