Reliable Computing of ReRAM Based Compute-in-Memory Circuits for AI Edge Devices-Reference-Cited by-同舟云学术

Reliable Computing of ReRAM Based Compute-in-Memory Circuits for AI Edge Devices

Published:2022-10-30 Issue: Volume: Page:
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Container-title:Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided Design
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Author:

Chang Meng-Fan¹,Hung Je-Ming¹,Chen Ping-Cheng²,Wen Tai-Hao¹

Affiliation:

1. National Tsing Hua University, Hsinchu, Taiwan

2. I-Shou University, Kaohsiung, Taiwan

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3508352.3561119

Reference47 articles.

1. A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

2. J. -M. Hung , et al., " An 8-Mb DC-Current-Free Binary-to-8b Precision Re RAM Nonvolatile Computing -in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge- AI Devices ," 2022 IEEE International Solid- State Circuits Conference (ISSCC) , 2022 , pp. 1 -- 3 . J. -M. Hung, et al., "An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices," 2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, pp. 1--3.

3. CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

4. A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

5. Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

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