Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement
Author:
Affiliation:
1. University of Ulsan,Department of Electrical, Electronic and Computer Engineering,Ulsan,South Korea,44610
2. Korea Advanced Nano Fab Center,Suwon-si,South Korea,17550
Funder
National Research Foundation of Korea (NRF)
Ministry of Science, ICT and Future Planning
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9947060/9947094/09947118.pdf?arnumber=9947118
Reference16 articles.
1. Impact of fast and slow transient charging effect on reliability instability in In0.7Ga0.3As quantum-well MOSFETs with high-κ dielectrics
2. Electrical characterization and analysis techniques for the high-κ era
3. Low frequency noise characterization of 0.25 μm Si CMOS transistors
4. Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide
5. Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors
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1. Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs;Materials;2023-09-09
2. New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors;Electronics;2023-07-11
3. Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions;Materials;2023-06-19
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