Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide-Reference-Cited by-同舟云学术

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Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Nitrided Gate Oxide

Published:2011-10-01 Issue:10S Volume:50 Page:10PB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han In-Shik,Kwon Hyuk-Min,Bok Jung-Deuk,Kwon Sung-Kyu,Jung Yi-Jung,Choi Woon-il,Choi Deuk-Sung,Lim Min-Gyu,Chung Yi-Sun,Lee Jung-Hwan,Lee Ga-Won,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

2. Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature;Organic Electronics;2012-07

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