Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9014608/08989957.pdf?arnumber=8989957
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics;Electronics;2024-03-01
2. 1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect;Japanese Journal of Applied Physics;2023-11-01
3. Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept;Key Engineering Materials;2023-05-19
4. 4H-SiC Semi-Circle Gate Power MOSFET with Low ON-Resistance and High Breakdown Voltage;2022 IEEE Calcutta Conference (CALCON);2022-12-10
5. Superjunction SiC TCOX-MOSFET: Study and Comparison;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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