Abstract
This paper investigates the short channel effects (SCE) of the recently proposed Singular Point Source MOS (S-MOS) SiC MOSFET. The study was carried out using 2D and 3D TCAD simulations for a planar, trench and S-MOS 1200V SiC MOSFETs for the IV output characteristics up to 1200V and under short circuit transient conditions. The S-MOS device shows no SCE up to the rated voltage when compared to reference planar and trench devices which exhibit strong SCE. This is due to the appropriate P++ protection of the N++ source and the electric field shielding due to the narrow mesa dimensions between orthogonal trenches where the channel is located.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference4 articles.
1. Performance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage Applications;Rahimo;Materials Science Forum,2017
2. T. Basler et al., Proc. PCIM Europe, Nuremberg, Germany, vol. 18, no. 455, June 2018, p.313–315.
3. Weijiang Ni et al., IEEE Trans. On Electron Devices, Vol. 67, No. 3, March 2020, p.1071–1076.
4. M.T. Rahimo, et al., "Advanced 1200V SiC MOSFET based on Singular Point Source MOS (S-MOS) Technology" Materials Science Forum, Vol. 1062, 2022, p.539–543.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献