Superjunction SiC TCOX-MOSFET: Study and Comparison
Author:
Affiliation:
1. University of Electronic Science and Technology of China,Chengdu,China,610054
2. Priosemi Technology Limited Company,Wuxi,China,214000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963284.pdf?arnumber=9963284
Reference6 articles.
1. A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results
2. Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
3. Superior Short-Circuit Performance of SiC Superjunction MOSFET
4. On the Specific on-State Resistance of Superjunction MOSFETs With a Compensated Pillar
5. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
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