Superior Short-Circuit Performance of SiC Superjunction MOSFET-Reference-Cited by-同舟云学术

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Superior Short-Circuit Performance of SiC Superjunction MOSFET

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Okada Masakazu,Kyogoku Shinya,Kumazawa Teruaki,Saito Jun,Morimoto Tadao,Takei Manabu,Harada Shinsuke

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170126.pdf?arnumber=9170126

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs;Solid State Phenomena;2024-08-21

2. SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness;Micro and Nanostructures;2024-07

3. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls;IEEE Electron Device Letters;2024-04

4. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

5. Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC;Japanese Journal of Applied Physics;2024-01-01

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