Temperature change induced degradation of SiC MOSFET devices-Reference-Cited by-同舟云学术

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Temperature change induced degradation of SiC MOSFET devices

Published:2016-05 Issue: Volume: Page:
ISSN:
Container-title:2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
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Author:

Sarkany Zoltan,Weikun He ,Rencz Marta

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7510581/7517513/07517736.pdf?arnumber=7517736

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs;IEEE Transactions on Power Electronics;2024-09

2. Thermal resistance measurement and failure analysis of Multi-discrete SiC MOSFET System Module;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Guideline for Reproducible SiC MOSFET Thermal Characterization Based on Source-Drain Voltage;IEEE Transactions on Industry Applications;2024-05

4. Reliability Improvement of 3.3 kV Full-SiC Power Modules for Power Cycling Tests With Sintered Copper Die Attach Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-09

5. Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes;IEEE Transactions on Power Electronics;2023-06

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