Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs-Reference-Cited by-同舟云学术

Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs

Published:2024-09 Issue:9 Volume:39 Page:11583-11595
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang Yi¹^ORCID,Zhang Yichi¹^ORCID,Wong Voon Hon²^ORCID,Kalker Sven³^ORCID,Caruso Antonio²^ORCID,Ruppert Lukas³^ORCID,Iannuzzo Francesco¹^ORCID,de Doncker Rik W.³^ORCID

Affiliation:

1. AAU Energy, Aalborg University, Aalborg, Denmark

2. Siemens Digital Industrial Software, Plano, TX, USA

3. Institute for Power Electronics and Electrical Drives, RWTH Aachen University, Aachen, Germany

Funder

Independent Research Fund Denmark

Impact of Short-circuit Events on Lifetime Expectancy of SiC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10599945/10483537.pdf?arnumber=10483537

Reference31 articles.

1. Mission Profile-Based System-Level Reliability Prediction Method for Modular Multilevel Converters

2. Application of structure functions for the investigation of forced air cooling

3. Structural Analysis of Power Devices and Assemblies by Thermal Transient Measurements

4. A Hybrid Modular Multilevel Converter Comprising SiC MOSFET and Si IGBT with Its Specialized Modulation and Voltage Balancing Scheme

5. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

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