Guideline for Reproducible SiC MOSFET Thermal Characterization Based on Source-Drain Voltage
Author:
Affiliation:
1. AAU Energy, Aalborg University, Aalborg, Denmark
2. Southwest Jiaotong University, Chengdu, China
3. Nexperia LTD, Stockport, U.K.
4. Siemens Digital Industries Software, Maryland Heights, MO, USA
Funder
Independent Research Fund Denmark
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/28/10535352/10387730.pdf?arnumber=10387730
Reference22 articles.
1. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles
2. An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains
3. A Hybrid Modular Multilevel Converter Comprising SiC MOSFET and Si IGBT with Its Specialized Modulation and Voltage Balancing Scheme
4. Junction temperature measurement of SiC MOSFETs: Straightforward as it seems?;Kestler,2018
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1. Figures-of-Merit Study for Thermal Transient Measurement of SiC MOSFETs;IEEE Transactions on Power Electronics;2024-09
2. A Sparsity-Promoting Time Domain Evaluation Method for Thermal Transient Measurement of Power Semiconductors;IEEE Transactions on Power Electronics;2024-06
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