New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling-Reference-Cited by-同舟云学术

New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Kong Qiwen¹,Liu Gan¹,Sun Chen¹,Zheng Zijie¹,Zhang Dong¹,Zhang Jishen¹,Xu Haiwen¹,Liu Long¹,Zhou Zuopu¹,Jiao Leming¹,Wang Xiaolin¹,Han Kaizhen¹,Kang Yuye¹,Nguyen Bich-Yen²,Ni Kai³,Gong Xiao¹

Affiliation:

1. ECE, National University of Singapore

2. Soitec,Bernin,France,38190

3. Rochester Institute of Technology

Funder

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019394.pdf?arnumber=10019394

Reference12 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs;IEEE Transactions on Electron Devices;2024-09

2. Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors;IEEE Transactions on Electron Devices;2024-09

3. Hydrogen-Related Instability of IGZO Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-05

4. The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization;IEEE Transactions on Electron Devices;2024-05

5. Fundamental understanding of NBTI degradation mechanism in IGZO channel devices;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14