New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling-Reference-Cited by-同舟云学术

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New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Kong Qiwen¹,Liu Gan¹,Sun Chen¹,Zheng Zijie¹,Zhang Dong¹,Zhang Jishen¹,Xu Haiwen¹,Liu Long¹,Zhou Zuopu¹,Jiao Leming¹,Wang Xiaolin¹,Han Kaizhen¹,Kang Yuye¹,Nguyen Bich-Yen²,Ni Kai³,Gong Xiao¹

Affiliation:

1. ECE, National University of Singapore

2. Soitec,Bernin,France,38190

3. Rochester Institute of Technology

Funder

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019394.pdf?arnumber=10019394

Reference12 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12

2. Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition;IEEE Transactions on Electron Devices;2023-12

3. Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications;Science China Information Sciences;2023-09-21

4. Universal PBTI Relaxation on the Negative V_TH Shift in Oxide Semiconductor Transistors and New Insights;IEEE Electron Device Letters;2023-07

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