Fundamental understanding of NBTI degradation mechanism in IGZO channel devices-Reference-Cited by-同舟云学术

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Fundamental understanding of NBTI degradation mechanism in IGZO channel devices

Published:2024-04-14 Issue: Volume: Page:1-7
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Zhao Ying¹,Rinaudo Pietro¹,Chasin Adrian²,Truijen Brecht²,Kaczer Ben²,Rassoul Nouredine²,Dekkers Harold²,Belmonte Attilio²,De Wolf Ingrid²,Kar Gouri²,Franco Jacopo²

Affiliation:

1. KU,Leuven,Belgium

2. imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529352.pdf?arnumber=10529352

Reference17 articles.

1. Understanding and modelling the PBTI reliability of thin-film IGZO transistors

2. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

3. Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

4. First demonstration of sub-12 nm Lg gate last IGZO- TFTs with oxygen tunnel architecture for front gate devices;Subhechha

5. First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, I_ON=1500 μA/μm@V_DS=1V and Retention Time>300s

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