Hydrogen-Related Instability of IGZO Field-Effect Transistors-Reference-Cited by-同舟云学术

Hydrogen-Related Instability of IGZO Field-Effect Transistors

Published:2024-05 Issue:5 Volume:71 Page:2995-3001
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Gan¹^ORCID,Kong Qiwen¹^ORCID,Zhang Dong¹^ORCID,Wang Xiaolin¹^ORCID,Zhou Zuopu¹^ORCID,Jiao Leming¹^ORCID,Han Kaizhen¹^ORCID,Kang Yuye¹,Nguyen Bich-Yen²^ORCID,Ni Kai³^ORCID,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore

2. Soitec, Bernin, France

3. College of Engineering, University of Notre Dame, Notre Dame, IN, USA

Funder

Advanced Research and Technology Innovation Centre (ARTIC) Program

NSF

SUPREME Center; one of Semiconductor Research Corporation (SRC)/Defense Advanced Research Projects Agency (DARPA) Joint University Microelectronics Program (JUMP) centers

Ministry of Education Tier 2

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10508280/10466728-aam.pdf

Reference35 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology

3. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, > 1011 cycles endurance and Lg scalability down to 14 nm;Belmonte

4. Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (V_th + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application

5. High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling