Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology-Reference-Cited by-同舟云学术

Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Baba H.¹,Ohshita S.¹,Hamada T.¹,Ando Y.¹,Hodo R.¹,Ono T.¹,Hirose T.¹,Kurokawa Y.¹,Murakawa T.¹,Kunitake H.¹,Nakura T.²,Kobayashi M.³,Yoshida H.⁴,Chen M.-C.⁴,Liao M.-H.⁵,Chang S.-Z.⁴,Yamazaki S.¹

Affiliation:

1. Semiconductor Energy Laboratory Co., Ltd.,Atsugi,Kanagawa,Japan,243-0036

2. Fukuoka University,Fukuoka,Fukuoka,Japan,814-0180

3. School of Engineering, The University of Tokyo,D.lab,Tokyo,Japan,153-8505

4. Powerchip Semiconductor Manufacturing Corporation,Hsinchu,Taiwan, R.O.C.

5. National Taiwan University,Taipei,Taiwan, R.O.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09721312.pdf?arnumber=9721312

Reference22 articles.

1. Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

2. Analysis of IGZO Crystalline Structure and Its Stability by First-Principles Calculations

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