A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μ A Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature
Author:
Affiliation:
1. Macronix International Co., Ltd 16 Li-Hsin Road, Hsinchu Science Park,Hsinchu,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019464.pdf?arnumber=10019464
Reference8 articles.
1. ${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration
2. A Novel SuperSteep Subthreshold Slope Dual-Channel FET Utilizing a Gate-Controlled Thyristor Mode-Induced Positive Feedback Current
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