Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing-Reference-Cited by-同舟云学术

Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

Published:2024-01-12 Issue:2 Volume:14 Page:179
ISSN:2079-4991
Container-title:Nanomaterials
language:en
Short-container-title:Nanomaterials

Author:

Lee Sang Ho¹^ORCID,Park Jin¹,Yoon Young Jun²,Kang In Man¹^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea

2. Department of Electronic Engineering, Andong National University, 1375 Gyengdong-ro, Andong 36729, Republic of Korea

Abstract

In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropriately generating impact ionization during the holding process through the application of an appropriate operation bias voltage. This leads to self-refreshing, which prevents the recombination of holes. When using the self-refreshing mechanism for the proposed device, the sensing margins were 15.4 and 12.7 μA/μm at 300 and 358 K, respectively. Moreover, the device achieved an excellent performance retention time of >500 ms, regardless of the temperature of the 1T-DRAM with a single gate. Furthermore, cell disturbance analysis and voltage optimization were performed to evaluate the in-cell reliability of the proposed device. It also showed excellent performance in terms of energy consumption and writing speed.

Funder

National Research Foundation of Korea

Ministry of Education, Korea

Kyungpook National University

IC Design Education Center

Andong National University

Publisher

MDPI AG

Link

https://www.mdpi.com/2079-4991/14/2/179/pdf

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