Hot Carrier Injection degradation induced dispersion: Model and circuit-level measurement-Reference-Cited by-同舟云学术

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Hot Carrier Injection degradation induced dispersion: Model and circuit-level measurement

Published:2011-10 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE International Integrated Reliability Workshop Final Report
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Author:

Cacho F.,Singh S. K.,Singh B.,Parthasarathy C.,Pion E.,Argoud F.,Federspiel X.,Pitolet H.,Roy D.,Huard V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6138496/6142567/06142609.pdf?arnumber=6142609

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Impact and Mitigation of Sense Amplifier Aging Degradation Using Realistic Workloads;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2017-12

5. Improving the drain-current expression of BSIM4 for hot-carrier degradation modeling that is suitable for analog applications;TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES;2015

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