A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure
Author:
Affiliation:
1. Chair for Electron Devices and Integrated Circuits (CEDIC), Technische Universität Dresden, Dresden, Germany
Funder
German National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9970422/09849023.pdf?arnumber=9849023
Reference20 articles.
1. Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
2. SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
3. W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region
4. 96 GHz 4.7 mW low‐power frequency tripler with 0.5 V supply voltage
5. 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
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2. A Low-Power W-Band SiGe-HBT Double-Balanced Up-Conversion Mixer With an Integrated Second-Order IF Low-Pass Filter;IEEE Microwave and Wireless Technology Letters;2024-05
3. Design of a Six-stage W-band Low-Noise Amplifier Using a 90-nm CMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
4. A Low-Power V-Band Radar Transceiver Front-End Chip Using 1.5 V Supply in 130-nm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-11
5. A W-band Class-F234 SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO6dB PAE and 26% 1-dB Large-Signal Power Bandwidth;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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