A Low-Power V-Band Radar Transceiver Front-End Chip Using 1.5 V Supply in 130-nm SiGe BiCMOS-Reference-Cited by-同舟云学术

A Low-Power V-Band Radar Transceiver Front-End Chip Using 1.5 V Supply in 130-nm SiGe BiCMOS

Author:

Sutbas Batuhan¹^ORCID,Ng Herman Jalli²^ORCID,Eissa Mohamed Hussein³^ORCID,Kahmen Gerhard¹^ORCID

Affiliation:

1. Leibniz-Institut für Innovative Mikroelektronik (IHP), Frankfurt an der Oder, Germany

2. Institute of Electrical Engineering and Information Science, Brandenburg University of Technology, Cottbus, Germany

3. Faculty of Electrical Engineering and Information Technology, Karlsruhe University of Applied Sciences, Karlsruhe, Germany

Funder

Federal Ministry of Education and Research of Germany (BMBF) through the iCampus Cottbus

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

Reference36 articles.

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