A W-band Class-F<sub>234</sub> SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO<sub>6dB</sub> PAE and 26% 1-dB Large-Signal Power Bandwidth-Reference-Cited by-同舟云学术

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A W-band Class-F₂₃₄ SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO_6dB PAE and 26% 1-dB Large-Signal Power Bandwidth

Published:2023-09-18 Issue: Volume: Page:
ISSN:
Container-title:2023 18th European Microwave Integrated Circuits Conference (EuMIC)
language:
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Author:

Vardarli Eren¹,Krattenmacher Mario¹,Weimer Christoph¹,Chen Austin Ying-Kuang²,Schröter Michael¹

Affiliation:

1. Technische Universität Dresden,Chair for Electron Devices and Integrated Circuits,Germany

2. University of California,Department of Electrical and Computer Engineering,Santa Cruz,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288907.pdf?arnumber=10288907

Reference12 articles.

1. International Series on Advances in Solid State Electronics and Technology

2. A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure

3. A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset

4. A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

5. An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023

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