Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications-Reference-Cited by-同舟云学术

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Published:2017-06 Issue:6 Volume:105 Page:1035-1050
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Chevalier Pascal^ORCID,Jungemann C.,Lovblom Rickard,Maneux Cristell,Ostinelli Olivier,Pawlak Andreas,Rinaldi Niccolo,Rucker Holger,Wedel Gerald,Zimmer Thomas,Schroter Michael,Bolognesi Colombo R.,d'Alessandro Vincenzo,Alexandrova Maria,Bock Josef,Flickiger Ralf,Fregonese Sebastien,Heinemann Bernd

Funder

European Commission through the RF2THZ SiSoC project of the EUREKA program CATRENE

Ministry of Industry, and the FP7 DOTSEVEN project. Technical University of Dresden

German National Science Foundation

ETH authors’

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/5/7931728/07879275.pdf?arnumber=7879275

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