Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-1916-7_29
Reference22 articles.
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2. Schröter M et al (2016) SiGe HBT technology: future trends and TCAD-based roadmap. Proc IEEE 105(6):1068–1086
3. Pfeiffer UR et al (2018) Current status of terahertz integrated circuits-from components to systems. In: 2018 IEEE BiCMOS and compound semiconductor integrated circuits and technology symposium (BCICTS). IEEE
4. Takai T et al (2017) IHP SAW technology and its application to microacoustic components. In: 2017 IEEE international ultrasonics symposium (IUS). IEEE
5. Sugiyama M et al (1989) A 40 GHz f/sub T/Si bipolar transistor LSI technology. In: International technical digest on electron devices meeting. IEEE
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