Author:
Schroter Michael,Rosenbaum Tommy,Chevalier Pascal,Heinemann Bernd,Voinigescu Sorin P.,Preisler Ed,Bock Josef,Mukherjee Anindya
Funder
European Commission
German National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Cited by
104 articles.
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1. The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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4. Hot Carrier Effects on High Frequency Characteristics of SiGe HBTs;International Journal of Electronics Letters;2023-10-09
5. Improving the thermal ruggedness of GaAs HBTs through nonuniform base ballasting optimization;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27