Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
language:
Short-container-title:

Author:

Kim Seong-Dong,Guillorn Michael,Lauer Isaac,Oldiges Phil,Hook Terence,Na Myung-Hee

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7321935/7333477/07333521.pdf?arnumber=7333521

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies;IEEE Transactions on Electron Devices;2024-08

2. Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors;Rare Metals;2024-07-09

3. Unravelling the Impact of Random Dopant Fluctuations on Si-Based 3nm NSFET: A NEGF Analysis;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

4. Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits’ Performance;ECS Journal of Solid State Science and Technology;2024-06-03

5. Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs;IEEE Transactions on Electron Devices;2024-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP