Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs-Reference-Cited by-同舟云学术

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Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs

Published:2024-06 Issue:6 Volume:71 Page:3498-3503
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hattori Junichi¹^ORCID,Fukuda Koichi¹^ORCID,Ikegami Tsutomu¹^ORCID,Hayashi Yoshihiro¹^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

Funder

New Energy and Industrial Technology Development Organization

Research and Development Project of the Enhanced Infrastructures for Post-5G Information and Communication Systems

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10509684.pdf?arnumber=10509684

Reference30 articles.

1. Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

2. Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

3. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

4. (Invited) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling

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