High Performance 4nm FinFET Platform (4LPE) with Novel Advanced Transistor Level DTCO for Dual-CPP/HP-HD Standard Cells-Reference-Cited by-同舟云学术

High Performance 4nm FinFET Platform (4LPE) with Novel Advanced Transistor Level DTCO for Dual-CPP/HP-HD Standard Cells

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Yasuda-Masuoka Yuri¹,Jeong Jaehun¹,Son Kihwang¹,Lee SeungWook¹,Park Seulki¹,Lee Youngho¹,Youn Kim Ju¹,Lee Jaeho¹,Cho Moongi¹,Lee Sihyung¹,Hong Soohun¹,Hong Heebum¹,Jung Younghun¹,Yoon Changkeun¹,Ko Yonghyun¹,Jung Kyunghoon¹,Myung Taehun¹,Youn Jong Mil¹,Jeong Gitae¹

Affiliation:

1. Foundry Business, Samsung Electronics,Hwasung-City,Gyeonggi-Do,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720656.pdf?arnumber=9720656

Reference7 articles.

1. Advancing Monolayer 2D NMOS and PMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling;dorow;Symp On VLSI Technology and Circuit T2–3,2021

2. The Complementary FET (CFET) for CMOS scaling beyond N3

3. Super Low-Power Advanced 5nm Extended Platform Technology for Extreme Low Voltage Applications;choi;Symp On VLSI Technology and Circuit T2–3,2021

4. Performance-Power Management Aware State-of – the-Art 5nm FinFET Design(5LPE) with Dual CPP from Mobile to HPC Application

5. Transistor Performance Elements for 5nm Node and Beyond;tsutsui;IEEE International Electron Devices Meeting Short-Course,2017

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