Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si-Reference-Cited by-同舟云学术

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Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Arimura H.,Wostyn K.,Ragnarsson L.-A.,Capogreco E.,Chasin A.,Conard T.,Brus S.,Favia P.,Franco J.,Mitard J.,Demuynck S.,Horiguchi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993467.pdf?arnumber=8993467

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing;Journal of Applied Physics;2024-03-27

2. Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger;IEEE Journal of the Electron Devices Society;2023

3. NH₃ PDA Temperature-Impact on Low-Frequency Noise Behavior of Si_0.7Ge_0.3 pFinFETs;IEEE Transactions on Electron Devices;2022-12

4. Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si_0.8Ge_0.2 Through HfO₂ Dielectric Direct Deposition;IEEE Electron Device Letters;2022-10

5. High-Ge-Content Si_1–xGe_x Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability;ACS Applied Electronic Materials;2022-05-28

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