Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger-Reference-Cited by-同舟云学术

Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

Published:2023 Issue: Volume:11 Page:274-281
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lee Meng-Chien¹^ORCID,Chen Wei-Lun¹,Zhao Yi-Yang¹,Wang Shin-Yuan¹^ORCID,Luo Guang-Li²^ORCID,Chien Chao-Hsin¹^ORCID

Affiliation:

1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

2. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10109810.pdf?arnumber=10109810

Reference42 articles.

1. Enabling next generation CMOS by novel EOT scaling module;dong;Proc Symp VLSI Technol,2021

2. Oxygen vacancy enhanced room temperature magnetism in Al-doped MgO nanoparticles

3. Electrical Characteristics of Si_0.8Ge_0.2 p-MOSFET With TMA Pre-Doping and NH₃ Plasma IL Treatment

4. Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn–Al–O Interfaces Fabricated by Atomic Layer Deposition

5. Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping;Journal of Materials Science: Materials in Electronics;2024-02