Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment-Reference-Cited by-同舟云学术

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Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment

Published:2020-10 Issue:10 Volume:67 Page:4067-4072
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Tsung-En^ORCID,Ke Mengnan^ORCID,Toprasertpong Kasidit^ORCID,Takenaka Mitsuru,Takagi Shinichi^ORCID

Funder

Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology, Japan

Japan Science and Technology Agency - Core Research for Evolutional Science and Technology (JST-CREST), Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9204488/09170838.pdf?arnumber=9170838

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies;IEEE Electron Device Letters;2024-06

2. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO₂/Al₂O₃ Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10

3. Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications;Scientific Reports;2023-06-09

4. Electrical Properties of HfO₂ on Si_1–xGe_x Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing;ACS Applied Electronic Materials;2023-02-01

5. Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger;IEEE Journal of the Electron Devices Society;2023

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