Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors-Reference-Cited by-同舟云学术

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Published:2014-08 Issue:8 Volume:61 Page:2793-2801
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tapajna Milan,Killat Nicole,Palankovski Vassil,Gregusova Dagmar,Cico Karol,Carlin Jean-Francois,Grandjean Nicolas,Kuball Martin,Kuzmik Jan

Funder

Research and Development Operational Program, European Regional Development Fund, through the Project Competence Center for New Materials, Advanced Technologies, and Energy

European Commission through the MORGAN Project

Slovak Research and Development Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6861490/06849487.pdf?arnumber=6849487

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