Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements-Reference-Cited by-同舟云学术

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Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Published:2022-11 Issue:11 Volume:69 Page:6010-6015
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Strenaer R.¹^ORCID,Guhel Y.¹^ORCID,Gaquiere C.²^ORCID,Boudart B.¹^ORCID

Affiliation:

1. Groupe de Recherche en Informatique, Image et Instrumentation de Caen Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC, Caen, France

2. Institut d’Electronique, de Microélectronique et de Nanotechnologie, Cité scientifique, Villeneuve-d’Ascq, France

Funder

PLACENANO Research Project

Normandy County Council, the European Union within the framework of the Operational Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09913927.pdf?arnumber=9913927

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination;physica status solidi (a);2024-01-15

2. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination;Micromachines;2023-05-08

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