Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress-Reference-Cited by-同舟云学术

Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress

Author:

Sun Li-Chuan¹^ORCID,Lin Shih-Kai²,Yeh Yu-Hsuan³,Tu Yu-Fa²^ORCID,Tan Yung-Fang¹,Zhou Kuan-Ju³,Tsai Tsung-Ming¹^ORCID,Chang Ting-Chang⁴^ORCID

Affiliation:

1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

3. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

National Science and Technology Council in Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference35 articles.

3. Performance-limiting traps in GaN-based HEMTs: From native defects to common impurities;rossetto;GaN Power Device,2016

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