The study of the contribution of the surface and bulk traps to the dynamic Rdson in AlGaN/GaN HEMT by light illumination-Reference-Cited by-同舟云学术

The study of the contribution of the surface and bulk traps to the dynamic Rdson in AlGaN/GaN HEMT by light illumination

Published:2016-10-31 Issue:18 Volume:109 Page:182103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liang Yanan¹,Jia Lifang²,He Zhi¹,Fan Zhongchao¹³,Zhang Yun²,Yang Fuhua¹⁴

Affiliation:

1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

2. Research and Development Center for Semiconductor Lighting, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

3. University of Chinese Academy of Sciences, Beijing 100083, China

4. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

Funder

CAS Key talent program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966536

Reference18 articles.

1. Temperature Dependence of the Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si Substrate

2. High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiNxsurface passivation layer deposited by low pressure CVD

3. Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

4. Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

5. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

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