O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Published:2015-01-19 Issue:3 Volume:106 Page:033507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Sen¹,Liu Xinyu¹^ORCID,Wei Ke¹,Liu Guoguo¹,Wang Xinhua¹,Sun Bing¹,Yang Xuelin²^ORCID,Shen Bo²,Liu Cheng³^ORCID,Liu Shenghou³^ORCID,Hua Mengyuan³,Yang Shu³,Chen Kevin J.³

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. School of Physics, Peking University, Beijing 100871, China

3. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

Funder

National Natural Science Foundation of China (NSFC)

Research Grants Council, University Grants Committee, Hong Kong (RGC, UGC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906601

Reference23 articles.

1. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

2. Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs

3. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

4. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

5. Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer;Journal of Semiconductors;2024-07-01

2. Presence of High Density Positive Fixed Charges at ALD–Al₂O₃/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure;physica status solidi (b);2024-06-22

3. Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering;Applied Physics Reviews;2024-05-31

4. Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al₂O₃ by Tetramethylammonium Hydroxide Wet Treatment;ACS Applied Electronic Materials;2024-01-11

5. Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors;Applied Physics Letters;2023-12-25

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3