Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737876
Reference33 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
3. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
4. AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
5. Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
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