A W-Band SiGe-HBT Colpitts VCO for Millimeter-Wave Applications with an Analog Tuning Range of 12%
Author:
Affiliation:
1. Technische Universität,Chair for Electron Devices and Integrated Circuits,Dresden,Germany
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720035/9720036/09720059.pdf?arnumber=9720059
Reference9 articles.
1. Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
2. A W-Band Low-Noise PLL With a Fundamental VCO in SiGe for Millimeter-Wave Applications
3. V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators
4. Phase noise in oscillators-leeson formula revisited
5. Design and Scaling of W-Band SiGe BiCMOS VCOs
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3. Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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