Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation

Author:

Müller Markus1,Krattenmacher Mario1,Leenders Hendrik2,Hamzeloui Sara3,Bolognesi Colombo3,Jungemann Christoph2,Schröter Michael1

Affiliation:

1. Chair for Electron Devices and Integrated Circuits (CEDIC), TU Dresden,Germany,01062

2. Chair of Electromagnetic Theory, RWTH Aachen University,Aachen,Germany,52072

3. ETH Zürich,Laboratory for Millimeter-Wave Electronics,Zürich,Switzerland,8092

Publisher

IEEE

Reference14 articles.

1. lnP HBTs for THz frequency integrated circuits;urteaga;Proc Int Conf Indium Phosphide and Related Materials,0

2. Modelling of Interface Carrier Transport for Device Simulation

3. lnGaAs-InP DHBTs with> 370 GHz fr and fmax using a graded carbon-doped base;dahlstrom;Proc IEEE Device Res Conf,2003

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