A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS-Reference-Cited by-同舟云学术

A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS

Published:2024-08 Issue:8 Volume:72 Page:4685-4700
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Starke David¹^ORCID,Vogelsang Florian¹^ORCID,Bott Jonathan¹^ORCID,Schöpfel Jan¹^ORCID,Bredendiek Christian²^ORCID,Aufinger Klaus³^ORCID,Pohl Nils¹^ORCID

Affiliation:

1. Institute of Integrated Systems, Ruhr University Bochum, Bochum, Germany

2. Fraunhofer Institute for High Frequency Physics and Radar Techniques FHR, Wachtberg, Germany

3. Infineon Technologies AG, Neubiberg, Germany

Funder

German Research Foundation (“Deutsche Forschungsgemeinschaft”)

German Federal Ministry of Education and Research (BMBF) in the course of the 6GEM research hub

German Ministry for Economic Affairs and Climate Action (BMWK) in the project URBANSens

ECSEL Joint Undertaking

European Union’s Horizon 2020 research and innovation programme and Germany, Netherlands, Austria, Romania, France, Sweden, Cyprus, Greece, Lithuania, Portugal, Italy, Finland, Turkey

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/22/10630575/10423289.pdf?arnumber=10423289

Reference88 articles.

1. SiGe BiCMOS Current Status and Future Trends in Europe

2. Integration of SiGe HBT with ft = 305 GHz, fmax = 537 GHz in 130 nm and 90 nm CMOS;Manger

3. SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

4. A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

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