V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators-Reference-Cited by-同舟云学术

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V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators

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Container-title:2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers
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Author:

Floyd B.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9231/29249/01320601.pdf?arnumber=1320601

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A W-Band SiGe-HBT Colpitts VCO for Millimeter-Wave Applications with an Analog Tuning Range of 12%;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16

2. Prospects and Limitations of Stacked-FET Approaches for Enhanced Output Power in Voltage-Controlled Oscillators;IEEE Transactions on Microwave Theory and Techniques;2016-03

3. A 0.13-$\mu{\hbox {m}}$ SiGe BiCMOS Colpitts-Based VCO for $W$-Band Radar Transmitters;IEEE Transactions on Microwave Theory and Techniques;2013-01

4. Introduction;SpringerBriefs in Electrical and Computer Engineering;2012

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