Ultra-Wideband Signal Source Tuneable From 86 GHz to 142 GHz in SiGe Technology
Author:
Affiliation:
1. Ruhr-University Bochum,Institute of Integrated Systems,Bochum,Germany
2. Fraunhofer Institute for High Frequency Physics and Radar Techniques FHR,Wachtberg,Germany
3. Infineon Technologies AG,Neubiberg,Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10207846/10207778/10207779.pdf?arnumber=10207779
Reference13 articles.
1. A 37-87 GHz Continuously Tunable Signal Source in a 130 nm SiGe:C BiCMOS Technology
2. A W-Band SiGe-HBT Colpitts VCO for Millimeter-Wave Applications with an Analog Tuning Range of 12%
3. SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency
4. Full Waveguide E- and W-Band Fundamental VCOs in SiGe:C Technology for Next Generation FMCW Radars Sensors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. Ultra-Wideband Transceiver MMIC Tuneable From 74.1 GHz to 147.8 GHz in SiGe Technology;IEEE Journal of Microwaves;2024-07
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