A 295-337 GHz 2.5 dBm Psat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology
Author:
Affiliation:
1. Institute for Electronics Engineering, Friedrich-Alexander University (FAU),Erlangen-Nuremberg,Germany
2. Technical University Braunschweig,Braunschweig,Germany
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720035/9720036/09720049.pdf?arnumber=9720049
Reference9 articles.
1. A 0.3-THz SiGe-based frequency doubler chip with 3-dB 50 GHz bandwidth and 17 dB peak conversion gain
2. A Technology Independent Synthesis Approach for Integrated mmWave Coupled Line Circuits
3. A Study of SiGe HBT Signal Sources in the 220–330-GHz Range
4. Fully Integrated Single-Chip 305–375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS
5. A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. A 0.32-THz 6.6-dBm Single-Chain CW Transmitter Using On-Chip Antenna With 2.65% DC-to-THz Efficiency;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11
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