A Study of SiGe HBT Signal Sources in the 220–330-GHz Range-Reference-Cited by-同舟云学术

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A Study of SiGe HBT Signal Sources in the 220–330-GHz Range

Published:2013-09 Issue:9 Volume:48 Page:2011-2021
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Voinigescu Sorin P.,Tomkins Alexander,Dacquay Eric,Chevalier Pascal,Hasch Juergen,Chantre Alain,Sautreuil Bernard

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6583962/06542030.pdf?arnumber=6542030

Cited by 64 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 223–276-GHz Cascadable FMCW Transceiver in 130-nm SiGe BiCMOS for Scalable MIMO Radar Arrays;IEEE Transactions on Microwave Theory and Techniques;2023-12

2. A 276–312-GHz (×12) Frequency Multiplier Chain With Milliwatt Level Output Power in 65-nm CMOS Technology;IEEE Microwave and Wireless Technology Letters;2023-11

3. A 293-to-303 GHz Fundamental VCO with -4dBm Peak Output Power in 40nm CMOS;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

4. A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. A 330-GHz Wide Tuning Range VCO Based on Common-Base Cross-Coupled Topology in SiGe BiCMOS Technology;IEEE Microwave and Wireless Technology Letters;2023-10

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