A 290–359 GHz Push-Push Signal Source with 1.7 dBm P<sub>max</sub> using Variable Inductance in SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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A 290–359 GHz Push-Push Signal Source with 1.7 dBm P_max using Variable Inductance in SiGe BiCMOS Technology

Published:2024-04-15 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE Wireless and Microwave Technology Conference (WAMICON)
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Author:

Breun Sascha¹,Schrotz Albert-Marcel¹,Koch Manuel¹,Issakov Vadim²,Weigel Robert¹

Affiliation:

1. Friedrich-Alexander-Universität Erlangen-Nürnberg,Institute for Electronics Engineering,Germany

2. Technische Universität Braunschweig,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10522823/10522798/10522867.pdf?arnumber=10522867

Reference9 articles.

1. Terahertz Imaging and Sensing Applications With Silicon-Based Technologies

2. A Wideband 341-386 GHz Transmitter in SiGe BiCMOS Technology

3. A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

4. A 273.5–312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process

5. SiGe Sub-THz VCOs Design Approach for Imaging Applications

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