Author:
Ahmed Faisal,Furqan Muhammad,Stelzer Andreas
Cited by
6 articles.
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1. A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03
2. A 295-337 GHz 2.5 dBm Psat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16
3. A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology;2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2021-01-17
4. A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology;IEEE Microwave and Wireless Components Letters;2020-10
5. A 210–291-GHz (8×) Frequency Multiplier Chain With Low Power Consumption in 0.13-μm SiGe;IEEE Microwave and Wireless Components Letters;2020-05