A 0.3-THz SiGe-based frequency doubler chip with 3-dB 50 GHz bandwidth and 17 dB peak conversion gain-Reference-Cited by-同舟云学术

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A 0.3-THz SiGe-based frequency doubler chip with 3-dB 50 GHz bandwidth and 17 dB peak conversion gain

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 12th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Ahmed Faisal,Furqan Muhammad,Stelzer Andreas

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8189162/8230630/08230678.pdf?arnumber=8230678

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Coupling Mechanisms for Efficient High Power and Low Phase Noise E-Band Quadrature VCOs in 130nm SiGe;IEEE Journal of Microwaves;2024-04

2. A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03

3. A 295-337 GHz 2.5 dBm P_sat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16

4. A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology;2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2021-01-17

5. A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology;IEEE Microwave and Wireless Components Letters;2020-10

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