A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS-Reference-Cited by-同舟云学术

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A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Romstadt Justin¹,Welling Tobias¹,Vogelsang Florian¹,Yildirim Muhammed Ali¹,Aufinger Klaus²,Pohl Nils¹

Affiliation:

1. Ruhr-University Bochum, Universitätsstr. 150,Bochum,Germany,D-44801

2. Infineon Technologies AG,Neubiberg,Germany,D-85579

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10311042.pdf?arnumber=10311042

Reference16 articles.

1. A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS

2. A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power

3. A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range

4. 220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology

5. A 295-337 GHz 2.5 dBm P_sat Cascode-Based Frequency Doubler in SiGe BiCMOS Technology

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