A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range
Author:
Affiliation:
1. Institute of Integrated Systems, Ruhr University,Bochum,Germany
2. IHP - Leibniz-Institut für innovative Mikroelektronik,Germany
Funder
Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9784154/9783612/09784318.pdf?arnumber=9784318
Reference21 articles.
1. SiGe Sub-THz VCOs Design Approach for Imaging Applications
2. 0.3-THz SiGe-Based High-Efficiency Push–Push VCOs With > 1-mW Peak Output Power Employing Common-Mode Impedance Enhancement
3. A 308-317GHz Source with 4.6mW Peak Radiated Power and on-Chip Frequency-Stabilization Feedback in 0.13µm BiCMOS
4. A lens-integrated 430 GHz SiGe HBT source with up to −6.3 dBm radiated power
5. A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS
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3. A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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