A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS
Author:
Affiliation:
1. Institute of Integrated Systems, Ruhr University,Bochum,Germany
2. Infineon Technologies,Germany
Funder
Bundesministerium für Bildung und Forschung
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288719.pdf?arnumber=10288719
Reference13 articles.
1. A Fully Integrated 0.48 THz FMCW Radar Transceiver MMIC in a SiGe-Technology
2. A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range
3. 220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology
4. A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power
5. A fully-integrated terahertz near-field sensor for super-resolution imaging in SiGe BiCMOS
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. A 377–416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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